TransEON Inc.
High-Performance GaN MOSFETs for Enhanced Spaceborne MMICs — The objective of the proposed project is to develop a space-qualified gallium nitride (GaN) integrated circuit platform capable of exceptional performance for next-generation satellite communications and spaceborne radar systems. In particular, upon completion of this project, the proposed GaN transistor chip platform will be operable at significantly higher frequencies and signal power levels than existing platforms. More specifically, the proposed chip platform will be capable of operating in challenging millimetre-wave frequency bands, enabling substantial improvements to the bandwidth of future low Earth orbit (LEO) satcom constellations for enhanced satellite internet in rural areas. It is anticipated that the GaN MOSFET will offer first-in-class performance, exceeding that of competing platforms in both terrestrial and space environments, while simultaneously providing indigenous commercial semiconductor manufacturing capability in Canada.